| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Small Signal | |
| Si | |
| Single Dual Collector | |
| 1 | |
| 80 | |
| 60 | |
| 5 | |
| 1.2@100mA@1A | |
| 0.3@100mA@1A|0.5@200mA@2A | |
| 2 | |
| 100 | |
| 75@50mA@2V|75@500mA@2V|75@1A@2V|40@2A@2V | |
| 800 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.57 |
| Package Width | 3.5 |
| Package Length | 6.5 |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | SOT |
| Supplier Package | SOT-223 |
| 4 | |
| Lead Shape | Gull-wing |
Design various electronic circuits with this versatile PNP PZT751T1G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 800 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |
Progetta dispositivi medici guidati dall'IA
White paper: consigli su progettazione e componenti e approfondimenti IA per soluzioni diagnostiche e terapeutiche più veloci e sicure.