| RoHS (Unione Europea) | Compliant |
| Stato del componente | Active |
| PPAP | No |
| Categoria prodotti | Power MOSFET |
| Material | SiC |
| Configuration | Quad |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 4 |
| Maximum Drain-Source Voltage (V) | 1200 |
| Maximum Gate-Source Voltage (V) | 22 |
| Operating Junction Temperature (°C) | -40 to 175 |
| Maximum Continuous Drain Current (A) | 77 |
| Maximum Drain-Source Resistance (mOhm) | 19@18V |
| Typical Gate Charge @ Vgs (nC) | 211@18V |
| Typical Input Capacitance @ Vds (pF) | 4696@800V |
| Maximum Power Dissipation (mW) | 198000 |
| Typical Fall Time (ns) | 7.5 |
| Typical Rise Time (ns) | 8.6 |
| Typical Turn-Off Delay Time (ns) | 103 |
| Typical Turn-On Delay Time (ns) | 33.3 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 175 |
