| RoHS (Unione Europea) | Compliant with Exemption |
| ECCN (Stati Uniti) | EAR99 |
| Stato del componente | Active |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Categoria prodotti | Power MOSFET |
| Configuration | Single Triple Source |
| Process Technology | SuperFET V |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 600 |
| Maximum Gate-Source Voltage (V) | ±30 |
| Maximum Gate Threshold Voltage (V) | 4.8 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Continuous Drain Current (A) | 41 |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 10 |
| Maximum Drain-Source Resistance (mOhm) | 61@10V |
| Typical Gate Charge @ Vgs (nC) | 76@10V |
| Typical Gate Charge @ 10V (nC) | 76 |
| Typical Gate to Drain Charge (nC) | 23 |
| Typical Gate to Source Charge (nC) | 23 |
| Typical Reverse Recovery Charge (nC) | 717 |
| Typical Input Capacitance @ Vds (pF) | 4175@400V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 15@400V |
| Minimum Gate Threshold Voltage (V) | 3.2 |
| Typical Output Capacitance (pF) | 63 |
| Maximum Power Dissipation (mW) | 255000 |
| Typical Fall Time (ns) | 2.8 |
| Typical Rise Time (ns) | 15 |
| Typical Turn-Off Delay Time (ns) | 108 |
| Typical Turn-On Delay Time (ns) | 42 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 48.8@10V |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 146 |
| Typical Gate Plateau Voltage (V) | 5.75 |
| Typical Reverse Recovery Time (ns) | 124 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Maximum Positive Gate-Source Voltage (V) | 30 |
| Mounting | Surface Mount |
| Package Height | 0.98 |
| Package Width | 8 |
| Package Length | 8 |
| PCB changed | 4 |
| Standard Package Name | DFN |
| Supplier Package | TDFN EP |
| Pin Count | 4 |
| Lead Shape | No Lead |
