onsemiNTJD1155LT1GInterruttori di potenza
Power Switch Hi Side 1-OUT 1A 260mOhm 6-Pin SC-88 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| High Side | |
| 1 | |
| 1.8 | |
| 8 | |
| 1.8 to 8 | |
| 1 | |
| 260 | |
| 400 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.9 mm |
| Package Width | 1.25 mm |
| Package Length | 2 mm |
| PCB changed | 6 |
| Standard Package Name | SOT |
| Supplier Package | SC-88 |
| 6 |
If you need to either amplify or switch between signals in your design, then ON Semiconductor's NTJD1155LT1G power MOSFET is for you. Its maximum power dissipation is 400 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device utilizes tmos technology. This N|P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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