onsemiNSBC114YPDXV6T1GBJT digitale
Trans Digital BJT NPN/PNP 50V 0.1A 500mW 6-Pin SOT-563 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| PNP|NPN | |
| Dual | |
| 50 | |
| 0.1 | |
| 80@5mA@10V | |
| 10 | |
| 0.21 | |
| 0.25@0.3mA@10mA | |
| 500 | |
| -55 | |
| 150 | |
| Automotive | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.55 mm |
| Package Width | 1.2 mm |
| Package Length | 1.6 mm |
| PCB changed | 6 |
| Standard Package Name | SOT |
| Supplier Package | SOT-563 |
| 6 | |
| Lead Shape | Flat |
Are you in need of the digital form of a traditional bipolar junction transistor? The npn and PNP NSBC114YPDXV6T1G digital transistor from ON Semiconductor is what you've been looking for. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 500 mW. It has a maximum collector emitter voltage of 50 V. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It is made in a dual configuration. This transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
Counter UAV Threats With Smart Defenses
Learn how to combine intelligent processing, advanced sensing and rapid response into a unified counter-UAV defensive system.