onsemiNGTB40N65FL2WGIGBT Chip
Trans IGBT Chip N-CH 650V 80A 366W 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Field Stop II|Trench | |
| N | |
| Single | |
| ±20 | |
| 650 | |
| 1.7 | |
| 80 | |
| 0.2 | |
| 366 | |
| -55 | |
| 175 | |
| Tube | |
| Mounting | Through Hole |
| Package Height | 21 mm |
| Package Width | 5 mm |
| Package Length | 16 mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247 |
| 3 | |
| Lead Shape | Through Hole |
This fast-switching NGTB40N65FL2WG IGBT transistor from ON Semiconductor will be perfect in your circuit. Its maximum power dissipation is 36000 mW. It has a maximum collector emitter voltage of 650 V. This device utilizes field stop ii|trench technology. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C.
| EDA / CAD Models |
Progetta dispositivi medici guidati dall'IA
White paper: consigli su progettazione e componenti e approfondimenti IA per soluzioni diagnostiche e terapeutiche più veloci e sicure.