onsemiNCV33152DR2GGate driver e Driver di potenza
Driver 1.5A 2-OUT High Speed Non-Inv Automotive AEC-Q100 8-Pin SOIC N T/R
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Yes |
| High Speed | |
| Non-Inverting | |
| 2 | |
| MOSFET | |
| 2 | |
| 36(Typ) | |
| 32(Typ) | |
| 55(Typ) | |
| CMOS|LSTTL | |
| 6.1 | |
| 18 | |
| 10.5(Typ) | |
| 1.58 | |
| 1.75 | |
| 1.5 | |
| 560 | |
| -40 | |
| 125 | |
| Automotive | |
| Under Voltage Lockout | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.5(Max) mm |
| Package Width | 4(Max) mm |
| Package Length | 5(Max) mm |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC N |
| 8 | |
| Lead Shape | Gull-wing |
Sleep easy by implementing this NCV33152DR2G power driver by ON Semiconductor. This device has a maximum propagation delay time of 55(typ) ns and a maximum power dissipation of 560 mW. Its maximum power dissipation is 560 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device has a minimum operating supply voltage of 6.5 V and a maximum of 18 V. This gate driver has an operating temperature range of -40 °C to 125 °C.
| EDA / CAD Models |
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