onsemiNCP5104DR2GGate driver e Driver di potenza
Driver 2-OUT High Side/Low Side Half Brdg Inv/Non-Inv 8-Pin SOIC N T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8542.39.00.90 | |
| Automotive | No |
| PPAP | No |
| High Side|Low Side | |
| Inverting|Non-Inverting | |
| Half Bridge | |
| 2 | |
| Dependent | |
| IGBT|MOSFET | |
| 2 | |
| 160 | |
| 75 | |
| 800 | |
| 3.3V|5V | |
| 10 | |
| 20 | |
| 0.8(Max) | |
| 2.3(Min) | |
| 30 | |
| -55 | |
| 150 | |
| Under Voltage Lockout | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.5(Max) |
| Package Width | 4(Max) |
| Package Length | 5(Max) |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC N |
| 8 | |
| Lead Shape | Gull-wing |
Switch between states in a high power transistor by using this NCP5104DR2G power driver developed by ON Semiconductor. This device has a maximum propagation delay time of 800 ns. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This gate driver has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device has a minimum operating supply voltage of 10 V and a maximum of 20 V.
| EDA / CAD Models |
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