onsemiMUN5212T1GBJT digitale

Trans Digital BJT NPN 50V 0.1A 310mW 3-Pin SC-70 T/R

Look no further than ON Semiconductor's NPN MUN5212T1G digital transistor's, the ideal component to use when designing a digital signal processing unit. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 60@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 310 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.

Import TariffMay apply to this part

15.000 pezzi: disponibili per la spedizione 2 domani

    Total$1.08Price for 1

    • disponibili per la spedizione 2 domani

      Ships from:
      Stati Uniti d'America
      Date Code:
      2001+
      Manufacturer Lead Time:
      0 settimane
      Country Of origin:
      Cina
      • In Stock: 15.000 pezzi
      • Price: $1.0765

    Progetta dispositivi medici guidati dall'IA

    White paper: consigli su progettazione e componenti e approfondimenti IA per soluzioni diagnostiche e terapeutiche più veloci e sicure.