| Compliant | |
| Active | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 5 | |
| 334 | |
| 200 | |
| 50 | |
| 2.6@10V | |
| 670@10V | |
| 670 | |
| 47000@25V | |
| 680000 | |
| 225 | |
| 155 | |
| 115 | |
| 47 | |
| -55 | |
| 175 | |
| Mounting | Surface Mount |
| Package Height | 5.55(Max) |
| Package Width | 23.25(Max) |
| Package Length | 25.25(Max) |
| PCB changed | 21 |
| Supplier Package | SMPD-X |
| 21 |
Looking for a component that can both amplify and switch between signals within your circuit? The MMIX1F420N10T power MOSFET from Ixys Corporation provides the solution. Its maximum power dissipation is 680000 mW. This device utilizes TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
| EDA / CAD Models |
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