Diodes IncorporatedMMBT5551-7-FGP BJT

Trans GP BJT NPN 160V 0.6A 300mW 3-Pin SOT-23 T/R

Thanks to Diodes Zetex, your circuit can handle high levels of voltage using the NPN MMBT5551-7-F general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 6 V.

Import TariffMay apply to this part

Totale in stock: 945.000 pezzi

Regional Inventory: 894.000

    Total$107.70Price for 3000

    894.000 in magazzino: disponibili per la spedizione 2 domani

    • (3000)

      disponibili per la spedizione 2 domani

      Ships from:
      Stati Uniti d'America
      Date Code:
      2431+
      Manufacturer Lead Time:
      24 settimane
      Country Of origin:
      Cina
      • In Stock: 894.000 pezzi
      • Price: $0.0359
    • (3000)

      disponibili per la spedizione 7 domani

      Ships from:
      Hong Kong
      Date Code:
      2527+
      Manufacturer Lead Time:
      12 settimane
      Country Of origin:
      Cina
      • In Stock: 51.000 pezzi
      • Price: $0.0196

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