Diodes IncorporatedMMBT2222A-13-FGP BJT
Trans GP BJT NPN 40V 0.6A 350mW 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Single | |
| 1 | |
| 75 | |
| 40 | |
| 6 | |
| -55 to 150 | |
| 1.2@15mA@150mA|2@50mA@500mA | |
| 0.3@15mA@150mA|1@50mA@500mA | |
| 0.6 | |
| 10 | |
| 40@500mA@10V|35@0.1mA@10V|35@150mA@1V|50@1mA@10V|75@10mA@10V|100@150mA@10V | |
| 350 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.98 mm |
| Package Width | 1.3 mm |
| Package Length | 2.9 mm |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
Add switching and amplifying capabilities to your electronic circuit with this NPN MMBT2222A-13-F GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.
Sistemi di droni più intelligenti: dal progetto al decollo
Scarica la guida e dotati di tutti gli strumenti e strategie intelligenti per progettare i sistemi di droni del futuro: agili, efficienti e modulari.

