| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 150 | |
| 150 | |
| 5 | |
| 0.5@0.1A@1A | |
| 8 | |
| 10000 | |
| 40@100mA@2V|40@2A@2V|40@3A@2V|20@4A@2V | |
| 2000 | |
| -65 | |
| 150 | |
| Tube | |
| Mounting | Through Hole |
| Package Height | 16.12(Max) mm |
| Package Width | 4.9(Max) mm |
| Package Length | 10.63(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220FP |
| 3 | |
| Lead Shape | Through Hole |
ON Semiconductor has the solution to your circuit's high-voltage requirements with their NPN MJF15030G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 150 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |
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