onsemiMC34151DR2GGate driver e Driver di potenza
Driver 1.5A 2-OUT High Speed Inv 8-Pin SOIC N T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8542.39.00.90 | |
| Automotive | No |
| PPAP | No |
| High Speed | |
| Inverting | |
| 2 | |
| Dependent | |
| MOSFET | |
| 2 | |
| 31(Typ) | |
| 32(Typ) | |
| 36(Typ) | |
| CMOS|LSTTL | |
| 6.5 | |
| 18 | |
| 10.5(Typ) | |
| 1.58 | |
| 1.75 | |
| 1.5 | |
| 560 | |
| 0 | |
| 70 | |
| Under Voltage Lockout | |
| No | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.38 |
| Package Width | 3.9 |
| Package Length | 4.9 |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC N |
| 8 | |
| Lead Shape | Gull-wing |
Use the MC34151DR2G power driver from ON Semiconductor for fast switching. This device has a maximum propagation delay time of 100 ns and a maximum power dissipation of 560 mW. Its maximum power dissipation is 560 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This gate driver has an operating temperature range of 0 °C to 70 °C. This device has a minimum operating supply voltage of 6.5 V and a maximum of 18 V.
| EDA / CAD Models |
Progetta dispositivi medici guidati dall'IA
White paper: consigli su progettazione e componenti e approfondimenti IA per soluzioni diagnostiche e terapeutiche più veloci e sicure.