STMicroelectronicsLET9045RF MOSFETs
Trans RF MOSFET N-CH 80V 9A 3-Pin PowerSO-10RF (Formed lead) Tube
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 80 | |
| 15 | |
| 10(Min) | |
| 9 | |
| 59@28V | |
| 0.8@28V | |
| 28@28V | |
| 2.5(Min) | |
| 79000 | |
| 59(Typ) | |
| 17.5 | |
| 1000 | |
| 65 | |
| -65 | |
| 165 | |
| Tube | |
| Industrial | |
| Mounting | Surface Mount |
| Package Height | 3.5 mm |
| Package Width | 9.4 mm |
| Package Length | 9.5 mm |
| PCB changed | 3 |
| Standard Package Name | SO |
| Supplier Package | PowerSO-10RF (Formed lead) |
| 3 | |
| Lead Shape | Gull-wing |
Using semiconductor technology, this LET9045 RF amplifier from STMicroelectronics operates at high frequencies to amplify or switch electronic signals and electrical power. Its maximum power dissipation is 79000 mW. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 1000 MHz.
| EDA / CAD Models |
Progetta dispositivi medici guidati dall'IA
White paper: consigli su progettazione e componenti e approfondimenti IA per soluzioni diagnostiche e terapeutiche più veloci e sicure.