IXYSIXXN200N60C3H1moduli IGBT

Trans IGBT Module N-CH 600V 200A 780000mW

This powerful and secure IXXN200N60C3H1 IGBT transistor from Ixys Corporation will make sure your circuit works properly. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 780000 mW. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.

A datasheet is only available for this product at this time.

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