| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 1000 | |
| ±20 | |
| 0.1 | |
| 80000@10V | |
| 6.9@10V | |
| 6.9 | |
| 54@25V | |
| 25000 | |
| 28 | |
| 12 | |
| 40 | |
| 12 | |
| -55 | |
| 150 | |
| Mounting | Surface Mount |
| Package Height | 2.38(Max) |
| Package Width | 6.22(Max) |
| Package Length | 6.73(Max) |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-252AA |
| 3 |
Make an effective common gate amplifier using this IXTY01N100 power MOSFET from Ixys Corporation. Its maximum power dissipation is 25000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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