| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 200 | |
| ±15 | |
| 4 | |
| 68 | |
| 100 | |
| 10 | |
| 55@10V | |
| 380@10V | |
| 380 | |
| 568000 | |
| 18 | |
| 29 | |
| 115 | |
| 63 | |
| -55 | |
| 150 | |
| Mounting | Surface Mount |
| Package Height | 5.1(Max) |
| Package Width | 14(Max) |
| Package Length | 16.05(Max) |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-268 |
| 3 |
Make an effective common source amplifier using this IXTT68P20T power MOSFET from Ixys Corporation. Its maximum power dissipation is 568000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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