| Compliant with Exemption | |
| EAR99 | |
| Active | |
| EA | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 200 | |
| ±20 | |
| 32 | |
| 78@10V | |
| 38@10V | |
| 38 | |
| 1760@25V | |
| 200000 | |
| 31 | |
| 18 | |
| 55 | |
| 14 | |
| -55 | |
| 175 | |
| Mounting | Through Hole |
| Package Height | 9.15(Max) mm |
| Package Width | 4.83(Max) mm |
| Package Length | 10.66(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220 |
| 3 |
Compared to traditional transistors, IXTP32N20T power MOSFETs, developed by Ixys Corporation, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 200000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes TrenchFET technology.
| EDA / CAD Models |
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