| Compliant with Exemption | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±30 | |
| 12 | |
| 500@10V | |
| 29@10V | |
| 29 | |
| 1830@25V | |
| 200000 | |
| 20 | |
| 27 | |
| 65 | |
| 22 | |
| -55 | |
| 150 | |
| Mounting | Through Hole |
| Package Height | 9.15(Max) |
| Package Width | 4.83(Max) |
| Package Length | 10.66(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220 |
| 3 |
Make an effective common gate amplifier using this IXTP12N50P power MOSFET from Ixys Corporation. Its maximum power dissipation is 200000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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