| Compliant with Exemption | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Source | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±30 | |
| 62 | |
| 100@20V | |
| 550@20V | |
| 11500@25V | |
| 800000 | |
| 75 | |
| 85 | |
| 110 | |
| 36 | |
| -55 | |
| 150 | |
| Mounting | Screw |
| Package Width | 25.42(Max) |
| Package Length | 38.23(Max) |
| PCB changed | 4 |
| Standard Package Name | SOT |
| Supplier Package | SOT-227B |
| 4 |
Create an effective common drain amplifier using this IXTN62N50L power MOSFET from Ixys Corporation. Its maximum power dissipation is 800000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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