| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 200 | |
| ±20 | |
| 110 | |
| 24@10V | |
| 500@10V | |
| 500 | |
| 23000@25V | |
| 960000 | |
| 135 | |
| 100 | |
| 33 | |
| 40 | |
| -55 | |
| 150 | |
| Mounting | Through Hole |
| Package Height | 26.16(Max) |
| Package Width | 5.13(Max) |
| Package Length | 19.96(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-264 |
| 3 |
This IXTK110N20L2 power MOSFET from Ixys Corporation can be used for amplification in your circuit. Its maximum power dissipation is 960000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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