| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±20 | |
| 20 | |
| 350@10V | |
| 150@10V | |
| 150 | |
| 4500@25V | |
| 300000 | |
| 40 | |
| 43 | |
| 70 | |
| 20 | |
| -55 | |
| 150 | |
| Mounting | Through Hole |
| Package Height | 21.46(Max) mm |
| Package Width | 5.3(Max) mm |
| Package Length | 16.26(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247AD |
| 3 |
This IXTH20N60 power MOSFET from Ixys Corporation can be used for amplification in your circuit. Its maximum power dissipation is 300000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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