| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 100 | |
| ±15 | |
| 76 | |
| 25@10V | |
| 197@10V | |
| 197 | |
| 13700@25V | |
| 298000 | |
| 20 | |
| 40 | |
| 52 | |
| 25 | |
| -55 | |
| 150 | |
| Mounting | Surface Mount |
| Package Height | 4.83(Max) |
| Package Width | 9.65(Max) |
| Package Length | 10.29(Max) |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-263AA |
| 3 |
As an alternative to traditional transistors, the IXTA76P10T power MOSFET from Ixys Corporation can be used to both amplify and switch electronic signals. Its maximum power dissipation is 298000 mW. This device utilizes trenchp technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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