| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Depletion | |
| N | |
| 1 | |
| 500 | |
| ±20 | |
| 550@0V | |
| 96@5V | |
| 2800@25V | |
| 300000 | |
| 43 | |
| 72 | |
| 82 | |
| 28 | |
| -55 | |
| 150 | |
| Mounting | Surface Mount |
| Package Height | 4.83(Max) |
| Package Width | 9.4(Max) |
| Package Length | 10.41(Max) |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO-263 |
| Supplier Package | D2PAK |
| 3 | |
| Lead Shape | Gull-wing |
This IXTA6N50D2 power MOSFET from Ixys Corporation can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 300000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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