| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Depletion | |
| N | |
| 1 | |
| 500 | |
| ±20 | |
| 0.8(Min) | |
| 4600@0V | |
| 12.7@5V | |
| 312@25V | |
| 60000 | |
| 52 | |
| 54 | |
| 35 | |
| 28 | |
| -55 | |
| 150 | |
| Mounting | Surface Mount |
| Package Height | 4.83(Max) mm |
| Package Width | 9.65(Max) mm |
| Package Length | 10.29(Max) mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-263AA |
| 3 |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the IXTA08N50D2 power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 60000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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