| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 250 | |
| ±20 | |
| 120 | |
| 24@10V | |
| 185@10V | |
| 185 | |
| 8700@25V | |
| 700000 | |
| 33 | |
| 33 | |
| 130 | |
| 30 | |
| -55 | |
| 150 | |
| Mounting | Through Hole |
| Package Height | 21.34(Max) mm |
| Package Width | 5.21(Max) mm |
| Package Length | 16.13(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Supplier Package | PLUS 247 |
| 3 |
Make an effective common gate amplifier using this IXFX120N25P power MOSFET from Ixys Corporation. Its maximum power dissipation is 700000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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