| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 320 | |
| 3.5@10V | |
| 430@10V | |
| 430 | |
| 26000@25V | |
| 1000000 | |
| 177 | |
| 46 | |
| 73 | |
| 36 | |
| -55 | |
| 175 | |
| Mounting | Surface Mount |
| Package Height | 5.1(Max) |
| Package Width | 14(Max) |
| Package Length | 16.05(Max) |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-268 |
| 3 |
Increase the current or voltage in your circuit with this IXFT320N10T2 power MOSFET from Ixys Corporation. Its maximum power dissipation is 1000000 mW. This device is made with hiperfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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