| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.21.00.95 | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Source | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 70 | |
| 88@10V | |
| 265@10V | |
| 265 | |
| 12000@25V | |
| 890000 | |
| 12 | |
| 25 | |
| 60 | |
| 26 | |
| -55 | |
| 150 | |
| Mounting | Screw |
| Package Height | 9.6(Max) mm |
| Package Width | 25.42(Max) mm |
| Package Length | 38.23(Max) mm |
| PCB changed | 4 |
| Standard Package Name | SOT |
| Supplier Package | SOT-227B |
| 4 | |
| Lead Shape | Screw |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Ixys Corporation's IXFN70N60Q2 power MOSFET can provide a solution. Its maximum power dissipation is 890000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes hiperfet technology.
| EDA / CAD Models |
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