| RoHS (Unione Europea) | Compliant with Exemption |
| ECCN (Stati Uniti) | EAR99 |
| Stato del componente | Active |
| Codice HTS | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Categoria prodotti | Power MOSFET |
| Process Technology | GigaMOS |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 150 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Maximum Continuous Drain Current (A) | 240 |
| Maximum Drain-Source Resistance (mOhm) | 5.2@10V |
| Typical Gate Charge @ Vgs (nC) | 460@10V |
| Typical Gate Charge @ 10V (nC) | 460 |
| Typical Input Capacitance @ Vds (pF) | 32000@25V |
| Maximum Power Dissipation (mW) | 1250000 |
| Typical Fall Time (ns) | 145 |
| Typical Rise Time (ns) | 125 |
| Typical Turn-Off Delay Time (ns) | 77 |
| Typical Turn-On Delay Time (ns) | 48 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| Mounting | Through Hole |
| Package Height | 26.16(Max) |
| Package Width | 5.13(Max) |
| Package Length | 19.96(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-264 |
| Pin Count | 3 |
