| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±30 | |
| 44 | |
| 140@10V | |
| 98@10V | |
| 98 | |
| 5440@25V | |
| 658000 | |
| 27 | |
| 29 | |
| 85 | |
| 28 | |
| -55 | |
| 150 | |
| Mounting | Through Hole |
| Package Height | 21.45(Max) |
| Package Width | 5.3(Max) |
| Package Length | 16.24(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247AD |
| 3 | |
| Lead Shape | Through Hole |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the IXFH44N50P power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 650000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes hiperfet technology.
| EDA / CAD Models |
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