| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 230 | |
| 4.7@10V | |
| 250@10V | |
| 250 | |
| 15300@25V | |
| 650000 | |
| 15 | |
| 40 | |
| 45 | |
| 29 | |
| -55 | |
| 175 | |
| Mounting | Through Hole |
| Package Height | 21.46(Max) mm |
| Package Width | 5.3(Max) mm |
| Package Length | 16.26(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247 |
| 3 |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Ixys Corporation's IXFH230N10T power MOSFET can provide a solution. Its maximum power dissipation is 650000 mW. This device utilizes hiperfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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