| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 110 | |
| 15@10V | |
| 110@10V | |
| 110 | |
| 3550@25V | |
| 480000 | |
| 25 | |
| 25 | |
| 65 | |
| 21 | |
| -55 | |
| 175 | |
| Mounting | Through Hole |
| Package Height | 21.45(Max) |
| Package Width | 5.3(Max) |
| Package Length | 16.24(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247AD |
| 3 | |
| Lead Shape | Through Hole |
Thanks to Ixys Corporation, both your amplification and switching needs can be taken care of with one component: the IXFH110N10P power MOSFET. Its maximum power dissipation is 480000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes hiperfet technology.
| EDA / CAD Models |
Progetta dispositivi medici guidati dall'IA
White paper: consigli su progettazione e componenti e approfondimenti IA per soluzioni diagnostiche e terapeutiche più veloci e sicure.