| Compliant with Exemption | |
| Active | |
| Automotive | No |
| PPAP | No |
| Mounting | Screw |
| Package Width | 25.42(Max) |
| Package Length | 38.23(Max) |
| PCB changed | 4 |
| Standard Package Name | SOT |
| Supplier Package | SOT-227B |
| 4 |
The IXBN75N170A IGBT transistor from Ixys Corporation is perfect to use as an electronic switch eliminating the current at the gate. It has a maximum collector emitter voltage of 1700 V. Its maximum power dissipation is 500000 mW. It is made in a single dual emitter configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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