| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 200 | |
| ±10 | |
| 17 | |
| 180@5V | |
| 66(Max)@5V | |
| 1800@25V | |
| 3100 | |
| 52 | |
| 83 | |
| 44 | |
| 8 | |
| -55 | |
| 150 | |
| Mounting | Surface Mount |
| Package Height | 4.83(Max) |
| Package Width | 9.65(Max) |
| Package Length | 10.41(Max) |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | D2PAK |
| 3 |
This IRL640SPBF power MOSFET from Vishay can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 3100 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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