| Compliant | |
| EAR99 | |
| Active | |
| 8541.10.00.80 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 200 | |
| ±20 | |
| 4.3 | |
| 800@10V | |
| 29(Max)@10V | |
| 29(Max) | |
| 700@25V | |
| 35000 | |
| 24 | |
| 27 | |
| 28 | |
| 12 | |
| -55 | |
| 150 | |
| Mounting | Through Hole |
| Package Height | 16.12(Max) mm |
| Package Width | 4.83(Max) mm |
| Package Length | 10.63(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220FP |
| 3 | |
| Lead Shape | Through Hole |
Make an effective common gate amplifier using this IRFI9630GPBF power MOSFET from Vishay. Its maximum power dissipation is 35000 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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