| RoHS (Unione Europea) | Compliant |
| ECCN (Stati Uniti) | EAR99 |
| Stato del componente | Obsolete |
| Codice HTS | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Categoria prodotti | Power MOSFET |
| Configuration | Dual Dual Drain |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain-Source Voltage (V) | 20 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Continuous Drain Current (A) | 8.9 |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 1 |
| Maximum Drain-Source Resistance (mOhm) | 18.3@10V |
| Typical Gate Charge @ Vgs (nC) | 4.9@4.5V |
| Typical Gate to Drain Charge (nC) | 1.7 |
| Typical Gate to Source Charge (nC) | 1.8 |
| Typical Reverse Recovery Charge (nC) | 3.5 |
| Typical Switch Charge (nC) | 2.3 |
| Typical Input Capacitance @ Vds (pF) | 540@10V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 91@10V |
| Minimum Gate Threshold Voltage (V) | 1.7 |
| Typical Output Capacitance (pF) | 180 |
| Maximum Power Dissipation (mW) | 2000 |
| Typical Fall Time (ns) | 3.6 |
| Typical Rise Time (ns) | 12 |
| Typical Turn-Off Delay Time (ns) | 7.1 |
| Typical Turn-On Delay Time (ns) | 6 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 14.6@10V|21.6@4.5V |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 71 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 62.5 |
| Typical Gate Plateau Voltage (V) | 3.6 |
| Typical Reverse Recovery Time (ns) | 13 |
| Maximum Diode Forward Voltage (V) | 1 |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Mounting | Surface Mount |
| Package Height | 1.38 |
| Package Width | 3.9 |
| Package Length | 4.9 |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC N |
| Pin Count | 8 |
| Lead Shape | Gull-wing |
