| RoHS (Unione Europea) | Compliant |
| ECCN (Stati Uniti) | EAR99 |
| Stato del componente | Obsolete |
| Codice HTS | COMPONENTS |
| Automotive | No |
| PPAP | No |
| Categoria prodotti | Power MOSFET |
| Material | Si |
| Configuration | Single Quad Drain Triple Source |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 30 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Continuous Drain Current (A) | 7.3 |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 1 |
| Maximum Drain-Source Resistance (mOhm) | 30@10V |
| Typical Gate Charge @ Vgs (nC) | 19@10V |
| Typical Gate Charge @ 10V (nC) | 19 |
| Typical Gate to Drain Charge (nC) | 6.3 |
| Typical Gate to Source Charge (nC) | 2.3 |
| Typical Reverse Recovery Charge (nC) | 73 |
| Typical Input Capacitance @ Vds (pF) | 550@25V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 100@25V |
| Minimum Gate Threshold Voltage (V) | 1 |
| Typical Output Capacitance (pF) | 260 |
| Maximum Power Dissipation (mW) | 2500 |
| Typical Fall Time (ns) | 19 |
| Typical Rise Time (ns) | 35 |
| Typical Turn-Off Delay Time (ns) | 21 |
| Typical Turn-On Delay Time (ns) | 7 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 27(Max)@6V|25(Max)@8V|23(Max)@10V|22(Max)@12V|21(Max)@14V|43(Max)@4V |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 58 |
| Typical Reverse Recovery Time (ns) | 48 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Mounting | Surface Mount |
| Package Height | 1.5(Max) mm |
| Package Width | 4(Max) mm |
| Package Length | 5(Max) mm |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC |
| Pin Count | 8 |
| Lead Shape | Gull-wing |
