STMicroelectronicsIRF630MOSFETs
Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220AB Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 200 | |
| ±20 | |
| 9 | |
| 400@10V | |
| 31@10V | |
| 31 | |
| 540@25V | |
| 75000 | |
| 15 | |
| 10 | |
| -65 | |
| 175 | |
| Industrial | |
| Tube | |
| Mounting | Through Hole |
| Package Height | 9.15(Max) |
| Package Width | 4.6(Max) |
| Package Length | 10.4(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220AB |
| 3 | |
| Lead Shape | Through Hole |
Use STMicroelectronics' IRF630 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 75000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with mesh overlay ii technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |
Progetta dispositivi medici guidati dall'IA
White paper: consigli su progettazione e componenti e approfondimenti IA per soluzioni diagnostiche e terapeutiche più veloci e sicure.