Infineon Technologies AGIPP65R099C6XKSA1MOSFETs
Trans MOSFET N-CH 650V 38A 3-Pin(3+Tab) TO-220 Tube
| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 650 | |
| 20 | |
| 38 | |
| 99@10V | |
| 127@10V | |
| 127 | |
| 2780@100V | |
| 278000 | |
| 6 | |
| 9 | |
| 77 | |
| 10.6 | |
| -55 | |
| 150 | |
| Tube | |
| Mounting | Through Hole |
| Package Height | 9.45(Max) mm |
| Package Width | 4.57(Max) mm |
| Package Length | 10.36(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220 |
| 3 | |
| Lead Shape | Through Hole |
Create an effective common drain amplifier using this IPP65R099C6XKSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 278000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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