Infineon Technologies AGIPP50R190CEXKSA1MOSFETs
Trans MOSFET N-CH 500V 24.8A 3-Pin(3+Tab) TO-220 Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| 20 | |
| 3.5 | |
| 24.8 | |
| 100 | |
| 1 | |
| 190@13V | |
| 47.2@10V | |
| 47.2 | |
| 1137@100V | |
| 152000 | |
| 7.5 | |
| 8.5 | |
| 54 | |
| 9.5 | |
| -55 | |
| 150 | |
| Tube | |
| 170@13V | |
| Mounting | Through Hole |
| Package Height | 9.25 |
| Package Width | 4.4 |
| Package Length | 10 |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220 |
| 3 | |
| Lead Shape | Through Hole |
This IPP50R190CEXKSA1 power MOSFET from Infineon Technologies can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 127000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with coolmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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