Infineon Technologies AGIPP037N08N3GXKSA1MOSFETs
Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220 Tube
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 80 | |
| ±20 | |
| 3.5 | |
| 100 | |
| 100 | |
| 1 | |
| 3.75@10V | |
| 88@10V | |
| 88 | |
| 6100@40V | |
| 214000 | |
| 14 | |
| 79 | |
| 45 | |
| 23 | |
| -55 | |
| 175 | |
| Tube | |
| 2.8@10V|3.6@6V|3.1@10V|3.9@6V | |
| 400 | |
| Mounting | Through Hole |
| Package Height | 9.45(Max) mm |
| Package Width | 4.57(Max) mm |
| Package Length | 10.36(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220 |
| 3 | |
| Lead Shape | Through Hole |
This IPP037N08N3GXKSA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 214000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with optimos technology.
| EDA / CAD Models |
Progetta dispositivi medici guidati dall'IA
White paper: consigli su progettazione e componenti e approfondimenti IA per soluzioni diagnostiche e terapeutiche più veloci e sicure.