Infineon Technologies AGIPD90N03S4L03ATMA1MOSFETs
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±16 | |
| 2.2 | |
| 90 | |
| 3.3@10V | |
| 60@10V | |
| 60 | |
| 4000@25V | |
| 94000 | |
| 7 | |
| 6 | |
| 37 | |
| 9 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 2.5@10V|3.4@4.5V | |
| Mounting | Surface Mount |
| Package Height | 2.3 mm |
| Package Width | 6.22 mm |
| Package Length | 6.5 mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | DPAK |
| 3 |
Create an effective common drain amplifier using this IPD90N03S4L03ATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 94000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology.
| EDA / CAD Models |
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