Infineon Technologies AGIPB026N06NATMA1MOSFETs

Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R

Use Infineon Technologies' IPB026N06NATMA1 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 3000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology.

Totale in stock: 22.605 pezzi

Regional Inventory: 605

    Total$1.27Price for 1

    605 in magazzino: Spedisce tra 2 giorni

    • Spedisce tra 2 giorni

      Ships from:
      Stati Uniti d'America
      Date Code:
      2237+
      Manufacturer Lead Time:
      20 settimane
      Minimum Of :
      1
      Maximum Of:
      605
      Country Of origin:
      Germania
         
      • Price: $1.2667
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • Spedisce tra 2 giorni

      Ships from:
      Stati Uniti d'America
      Date Code:
      2237+
      Manufacturer Lead Time:
      20 settimane
      Country Of origin:
      Germania
      • In Stock: 605 pezzi
      • Price: $1.2667
    • (1000)

      Spedisce tra 3 giorni

      Ships from:
      Paesi Bassi
      Date Code:
      2417+
      Manufacturer Lead Time:
      20 settimane
      Country Of origin:
      Malaysia
      • In Stock: 22.000 pezzi
      • Price: $0.8705

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