Infineon Technologies AGIPAN60R360PFD7SXKSA1MOSFETs

The 600V CoolMOS™ PFD7 superjunction MOSFETs complement the CoolMOS™ 7 offering for consumer applications. The IPAN60R360PFD7S in a TO-220 FullPAK NL package achieves low switching losses, featuring RDS(on) of 360mΩ. The 600V CoolMOS™ PFD7 comes with an integrated fast body diode ensuring a robust device and in turn reduced bill-of-material (BOM) for the customer.

This product family is tailored to ultrahigh power density as well as the highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency over CoolMOS™ P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.

 

Summary of Features

 

• •  Very low FOM RDS(on) x Eoss
• •  Integrated robust fast body diode
• •  Up to 2kV ESD protection
• •  Wide range of RDS(on) values
• •  Excellent commutation ruggedness
• •  Low EMI
• •  Broad package portfolio

 

Benefits

 

• •  Minimized switching losses
• •  Power density improvement compared to latest CoolMOS™ charger technology
• •  Increased efficiency and improved thermal behavior compared to CoolMOS™ CE technology for low power drives applications
• •  BOM cost reduction and easy manufacturing
• •  Robustness and reliability
• •  Easy to select the right parts for design fine-tuning

 

Potential Applications

 

• •  Consumer
• •  High-density Charger and Adapter
• •  USB PD
• •  Fridge
• •  Fans
• •  Pumps