Infineon Technologies AGIPA65R600E6XKSA1MOSFETs
Trans MOSFET N-CH 650V 7.3A 3-Pin(3+Tab) TO-220FP Tube
| Compliant | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 650 | |
| 20 | |
| 3.5 | |
| 7.3 | |
| 100 | |
| 1 | |
| 600@10V | |
| 23@10V | |
| 23 | |
| 440@100V | |
| 28000 | |
| 11 | |
| 8 | |
| 64 | |
| 10 | |
| -55 | |
| 150 | |
| Tube | |
| 540@10V | |
| 18 | |
| Mounting | Through Hole |
| Package Height | 16 |
| Package Width | 4.7 |
| Package Length | 10.5 |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220FP |
| 3 | |
| Lead Shape | Through Hole |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the IPA65R600E6XKSA1 power MOSFET, developed by Infineon Technologies. Its maximum power dissipation is 28000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with coolmos technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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