| RoHS (Unione Europea) | Compliant with Exemption |
| ECCN (Stati Uniti) | EAR99 |
| Stato del componente | Active |
| Codice HTS | FQP8N80C |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Categoria prodotti | Power MOSFET |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 800 |
| Maximum Gate-Source Voltage (V) | ±30 |
| Maximum Gate Threshold Voltage (V) | 5 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Continuous Drain Current (A) | 8 |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 10 |
| Maximum Drain-Source Resistance (mOhm) | 1550@10V |
| Typical Gate Charge @ Vgs (nC) | 35@10V |
| Typical Gate Charge @ 10V (nC) | 35 |
| Typical Gate to Drain Charge (nC) | 14 |
| Typical Gate to Source Charge (nC) | 10 |
| Typical Reverse Recovery Charge (nC) | 8200 |
| Typical Input Capacitance @ Vds (pF) | 1580@25V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 13@25V |
| Minimum Gate Threshold Voltage (V) | 3 |
| Typical Output Capacitance (pF) | 135 |
| Maximum Power Dissipation (mW) | 178000 |
| Typical Fall Time (ns) | 70 |
| Typical Rise Time (ns) | 110 |
| Typical Turn-Off Delay Time (ns) | 65 |
| Typical Turn-On Delay Time (ns) | 40 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tube |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 1290@10V |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 32 |
| Typical Gate Plateau Voltage (V) | 6.5 |
| Typical Reverse Recovery Time (ns) | 690 |
| Maximum Diode Forward Voltage (V) | 1.4 |
| Maximum Positive Gate-Source Voltage (V) | 30 |
| Mounting | Through Hole |
| Package Height | 9.4(Max) |
| Package Width | 4.7(Max) |
| Package Length | 10.67(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220 |
| Pin Count | 3 |
| Lead Shape | Through Hole |
