Diodes IncorporatedDSS3540M-7BGP BJT
Trans GP BJT PNP 40V 0.5A 1000mW 3-Pin X1-DFN T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Small Signal | |
| Single | |
| 1 | |
| 40 | |
| 40 | |
| 6 | |
| 1.2@50mA@500mA | |
| 0.05@0.5mA@10mA|0.13@5mA@100mA|0.2@10mA@200mA|0.35@50mA@500mA | |
| 0.5 | |
| 200@10mA@2V|150@100mA@2V|40@500mA@2V | |
| 1000 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.47 |
| Package Width | 1 |
| Package Length | 0.6 |
| PCB changed | 3 |
| Standard Package Name | DFN |
| Supplier Package | X1-DFN |
| 3 |
This specially engineered PNP DSS3540M-7B GP BJT from Diodes Zetex comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 250 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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