| RoHS (Unione Europea) | Compliant |
| ECCN (Stati Uniti) | EAR99 |
| Stato del componente | Active |
| Codice HTS | EA |
| Categoria prodotti | Power MOSFET |
| Configuration | Dual |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain-Source Voltage (V) | 12 |
| Maximum Gate-Source Voltage (V) | ±8 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Continuous Drain Current (A) | 25 |
| Maximum Drain-Source Resistance (mOhm) | 2.8@4.5V |
| Typical Gate Charge @ Vgs (nC) | 36.4@4V |
| Typical Input Capacitance @ Vds (pF) | 2504@10V |
| Maximum Power Dissipation (mW) | 2750 |
| Typical Fall Time (ns) | 3900 |
| Typical Rise Time (ns) | 1788 |
| Typical Turn-Off Delay Time (ns) | 5412 |
| Typical Turn-On Delay Time (ns) | 419 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Mounting | Surface Mount |
| Package Height | 0.11 |
| Package Width | 1.49 |
| Package Length | 2.98 |
| PCB changed | 10 |
| Supplier Package | X4-DSN |
| Pin Count | 10 |
