STMicroelectronicsD45H11FPGP BJT
Trans GP BJT PNP 80V 10A 36000mW 3-Pin(3+Tab) TO-220FP Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| EA | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Single | |
| 1 | |
| 80 | |
| 5 | |
| 150 | |
| 1.5@0.8A@8A | |
| 1@0.4A@8A | |
| 10 | |
| 60@2A@1V|40@4A@1V | |
| 36000 | |
| -55 | |
| 150 | |
| Tube | |
| Industrial | |
| Mounting | Through Hole |
| Package Height | 16.4(Max) mm |
| Package Width | 4.6(Max) mm |
| Package Length | 10.4(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220FP |
| 3 | |
| Lead Shape | Through Hole |
Add switching and amplifying capabilities to your electronic circuit with this PNP D45H11FP GP BJT from STMicroelectronics. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 36000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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